Rectifying resistance-switching behaviour of Ag/SBTO/STMO/\(\hbox {p}^{+}\)-Si heterostructure films

  • Wenbo Zhang
  • Hua Wang
  • Jiwen Xu
  • Guobao Liu
  • Hang Xie
  • Ling Yang


The \(\hbox {Sr}_{0.88}\hbox {Bi}_{0.12}\hbox {TiO}_{3}/\hbox {SrTi}_{0.92}\hbox {Mg}_{0.08}\hbox {O}_{3}\) (SBTO/STMO) heterostructure films were prepared on \(\hbox {p}^{+}\hbox {-Si}\) substrates by sol–gel spin-coating technique, and the films had good crystallinity and uniform grain distribution. The heterostructure films with a structure of Ag/SBTO/STMO/\(\hbox {p}^{+}\hbox {-Si}\) exhibited a bipolar, remarkable resistance-switching characteristic, and \(R_{\mathrm{HRS}}/R_{\mathrm{LRS}}\,\,{\sim }10^{4}\). More importantly, the heterostructure films showed rectifying characteristic in the low resistance state (LRS), and the rectification ratio can reach \(10^{2 }\) at \(\pm 1\hbox { V}\). The dominant resistive-switching conduction mechanism of high resistance state (HRS) was Ohmic behaviour, and the LRS changed to space charge-limited current (SCLC).


Resistive switching heterostructure \(\hbox {SrTi}_{0.92}\hbox {Mg}_{0.08}\hbox {O}_{3}\) \(\hbox {Sr}_{0.88}\hbox {Bi}_{0.12}\hbox {TiO}_{3}\) sol–gel 



This work was supported by the Guangxi Nature Science Foundations, China (grant no. 2015GXNSFAA139253).


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Copyright information

© Indian Academy of Sciences 2018

Authors and Affiliations

  • Wenbo Zhang
    • 1
  • Hua Wang
    • 1
  • Jiwen Xu
    • 1
  • Guobao Liu
    • 1
  • Hang Xie
    • 1
  • Ling Yang
    • 1
  1. 1.School of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilinPeople’s Republic of China

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