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Rectifying resistance-switching behaviour of Ag/SBTO/STMO/\(\hbox {p}^{+}\)-Si heterostructure films

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Abstract

The \(\hbox {Sr}_{0.88}\hbox {Bi}_{0.12}\hbox {TiO}_{3}/\hbox {SrTi}_{0.92}\hbox {Mg}_{0.08}\hbox {O}_{3}\) (SBTO/STMO) heterostructure films were prepared on \(\hbox {p}^{+}\hbox {-Si}\) substrates by sol–gel spin-coating technique, and the films had good crystallinity and uniform grain distribution. The heterostructure films with a structure of Ag/SBTO/STMO/\(\hbox {p}^{+}\hbox {-Si}\) exhibited a bipolar, remarkable resistance-switching characteristic, and \(R_{\mathrm{HRS}}/R_{\mathrm{LRS}}\,\,{\sim }10^{4}\). More importantly, the heterostructure films showed rectifying characteristic in the low resistance state (LRS), and the rectification ratio can reach \(10^{2 }\) at \(\pm 1\hbox { V}\). The dominant resistive-switching conduction mechanism of high resistance state (HRS) was Ohmic behaviour, and the LRS changed to space charge-limited current (SCLC).

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Acknowledgements

This work was supported by the Guangxi Nature Science Foundations, China (grant no. 2015GXNSFAA139253).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Wenbo Zhang, Hua Wang, Jiwen Xu, Guobao Liu, Hang Xie & Ling Yang

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  1. Wenbo Zhang
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  2. Hua Wang
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  3. Jiwen Xu
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  4. Guobao Liu
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  6. Ling Yang
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Correspondence to Hua Wang.

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Zhang, W., Wang, H., Xu, J. et al. Rectifying resistance-switching behaviour of Ag/SBTO/STMO/\(\hbox {p}^{+}\)-Si heterostructure films. Bull Mater Sci 41, 70 (2018). https://doi.org/10.1007/s12034-018-1596-0

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  • DOI: https://doi.org/10.1007/s12034-018-1596-0

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