Abstract
The photocurrent (PC) spectrum of AgIn5S8 crystal consists of a single peak, which provides to determine the bandgap energy by applying the Moss rule. The temperature dependence of the bandgap energy was also calculated. The PC dramatically increased by pre-illumination with light having wavelength corresponding to the bandgap of AgIn5S8. The temperature-dependent PC of the sample was measured at different temperatures from 80 to 300 K and the PC spectrum consisted a single broad peak. Thermal quenching of the PC was observed to start at ∼105 K and the PC completely quenched at ∼180 K. The quenching mechanism was discussed in terms of the two-centre model. The height of the PC peak rised linearly with applied voltage up to 5.0 V under constant intensity of light. Similarly, the dark current–voltage characteristics consisted of a single region dominating an ohmic behaviour, and no space charge limited region was apparent at various temperatures up to 20 V.
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BUCURGAT, M., OZDEMIR, S. & FIRAT, T. Photocurrent analysis of AgIn5S8 crystal. Bull Mater Sci 39, 1521–1529 (2016). https://doi.org/10.1007/s12034-016-1302-z
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DOI: https://doi.org/10.1007/s12034-016-1302-z