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Effect of ‘Al’ concentration on spin-dependent resonant tunnelling in InAs/Ga1−y Al y As symmetrical double-barrier heterostructures

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Abstract

The effect of ‘Al’ concentration on spin-dependent tunnelling in strained non-magnetic symmetric double-barrier semiconductor has been theoretically investigated. The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reported for the first time in the case of InAs/Ga1−y Al y As heterostructures for various ‘Al’ concentrations and for various barrier widths. Cent percentage polarization can be obtained in this strained non-magnetic double-barrier semiconductor even without any external field.

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Authors and Affiliations

  1. Department of Physics, The American College, Madurai, 625002, India

    L BRUNO CHANDRASEKAR & K GNANASEKAR

  2. Department of Physics, Alagappa Arts College, Karaikudi, 630003, India

    M KARUNAKARAN

  3. Department of Physics, Sree Sevugan-Annamalai College, Devakottai, 630303, India

    R CHANDRAMOHAN

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  1. L BRUNO CHANDRASEKAR
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  2. K GNANASEKAR
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  3. M KARUNAKARAN
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  4. R CHANDRAMOHAN
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Correspondence to L BRUNO CHANDRASEKAR.

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CHANDRASEKAR, L.B., GNANASEKAR, K., KARUNAKARAN, M. et al. Effect of ‘Al’ concentration on spin-dependent resonant tunnelling in InAs/Ga1−y Al y As symmetrical double-barrier heterostructures. Bull Mater Sci 39, 1435–1440 (2016). https://doi.org/10.1007/s12034-016-1299-3

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  • DOI: https://doi.org/10.1007/s12034-016-1299-3

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