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Characteristics of CoPc/CdS hybrid diode device

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Abstract

CdS/CoPc hybrid heterojunctions were fabricated and characterized. CdS films were deposited by the spray pyrolysis technique on indium tin oxide (ITO)-coated glass substrates and CoPc films coated on CdS by chemical precipitation. Ag contact metal deposited on CoPc by e-beam evaporation and glass/ITO/CdS/ CoPc/Ag structures were fabricated. Rectification ratio, ideality factor, barrier height and junction parameters of the devices were determined. It is shown that device has diode characteristics with the ideality factor (n) of 4.8, rectification ratio of 4.5 and the built-in voltage (V b) of 0.48 V. Absorption energy for CoPc was found as 1.57 eV. The results encourage utilizing CoPc as absorber organic material for solar cells.

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Authors and Affiliations

  1. Yildiz Technical University, Department of Physics, Davutpasa Campus, 34220, Esenler, Istanbul, Turkey

    MURAT ÇALIŞKAN & SERÇO SERKIS YEŞILKAYA

  2. Yildiz Technical University, Department of Chemistry, Davutpasa Campus, 34220, Esenler, Istanbul, Turkey

    MEVLÜDE CANLICA

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  1. MURAT ÇALIŞKAN
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  2. SERÇO SERKIS YEŞILKAYA
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  3. MEVLÜDE CANLICA
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Correspondence to SERÇO SERKIS YEŞILKAYA.

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ÇALIŞKAN, M., YEŞILKAYA, S.S. & CANLICA, M. Characteristics of CoPc/CdS hybrid diode device. Bull Mater Sci 38, 1439–1442 (2015). https://doi.org/10.1007/s12034-015-1034-5

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  • DOI: https://doi.org/10.1007/s12034-015-1034-5

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