Abstract
In this paper, a comparison of the interfacial electronic properties between Pt/Ir conductive atomic force microscopy (C-AFM) tip and ZrO2 organic array was carried out. A uniformed ZrO2 array was fabricated with a mean diameter of around 1 μm using laser interference lithography. A C-AFM measurement set-up was built up. The I–V curve was directly measured of the organic ZrO2 array which shows a resistive switching characteristic by C-AFM measurement. The set voltage is 18.0 V and the reset voltage is −5.0 V. After the Pt layer was coated on the ZrO2 array, the set voltage decreases to 0.8 V and the reset voltage decreases to −2.2 V. This result shows that Pt layer can prevent the potential drop effectively. The electron barrier height between Pt/Ir C-AFM tip and organic ZrO2 array was enhanced by sputtering Pt layer on the ZrO2 organic array.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (No. 51372198). We thank the Foundation of young teachers of Xian University of Technology. We also thank the National Natural Science Foundation of China (No. 51202190).
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LI, Y., ZHAO, G., KOU, Z. et al. Study of influence on micro-fabricated resistive switching organic ZrO2 array by C-AFM measurement. Bull Mater Sci 38, 1055–1059 (2015). https://doi.org/10.1007/s12034-015-0932-x
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DOI: https://doi.org/10.1007/s12034-015-0932-x