Abstract
The growth of In x Ga1−x N films (x = 0⋅1 and x = 0⋅2) on a thin gold layer (Au/SiO2) by chemical vapour deposition (CVD) at 650 ∘C is reported. As a novelty, the use of a Ga–In metallic alloy to improve the indium incorporation in the In x Ga1−x N is proposed. The results of high quality In x Ga1−x N films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the In x Ga1−x N and GaN films is shown as a function of the indium incorporation. The highest crystalline In x Ga1−x N films structure was obtained with an indium composition of x = 0⋅20. Also, the preferential growth on the (002) plane over In0⋅2 Ga0⋅8 N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the In x Ga1−x N films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 ∘C. The TL intensity was found to depend on composition being higher for x = 0⋅1 and increases as radiation dose increases.
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Acknowledgements
Authors gratefully acknowledge to Universidad Michoacana and Universidad de Sonora for the technical facilities provided. This research work was supported by CONACYT (project #102671).
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RAMOS-CARRAZCO, A., GARCÍA, R., BARBOZA-FLORES, M. et al. In x Ga1−x N fibres grown on Au/SiO2 by chemical vapour deposition. Bull Mater Sci 37, 1597–1602 (2014). https://doi.org/10.1007/s12034-014-0711-0
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DOI: https://doi.org/10.1007/s12034-014-0711-0