Skip to main content
Log in

Experiment and Prediction on Thermal Conductivity of Al2O3/ZnO Nano Thin Film Interface Structure

  • Published:
Bulletin of Materials Science Aims and scope Submit manuscript

Abstract

We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness is > 300 nm; however, TC of Al2O3/ZnO nano thin interface is higher than that of relevant single nano thin interface when the thin films thickness is < 10 nm. This prediction may build a basis for the understanding of interface between two different oxide materials. It implies an idea for new generation of semiconductor devices manufacturing.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Ping Yang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Yang, P., Zhang, L., Yang, H. et al. Experiment and Prediction on Thermal Conductivity of Al2O3/ZnO Nano Thin Film Interface Structure. Bull Mater Sci 37, 449–454 (2014). https://doi.org/10.1007/s12034-014-0667-0

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12034-014-0667-0

Keywords

Navigation