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High mobility polymer gated organic field effect transistor using zinc phthalocyanine

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Abstract

Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film prepared by chemical vapour deposition was used as the organic gate insulator. The annealing of the samples was performed at 120 °C for 3 h. At room temperature, these transistors exhibit p-type conductivity with field-effect mobilities ranging from 0·025–0·037 cm2/Vs and a (I on/I off) ratio of ∼103. The effect of annealing on transistor characteristics is discussed.

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Acknowledgement

This work was supported by the Millimeter-Wave Innovation Technology Research Centre (MINT), Dongguk University, Republic of Korea.

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Authors and Affiliations

  1. Millimeter- Wave Innovation Technology Research Centre (MINT), Dongguk University, Seoul, 100-715, Republic of Korea

    K R RAJESH, V KANNAN, M R KIM, Y S CHAE & J K RHEE

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  1. K R RAJESH
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  2. V KANNAN
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  3. M R KIM
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Correspondence to K R RAJESH.

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RAJESH, K.R., KANNAN, V., KIM, M.R. et al. High mobility polymer gated organic field effect transistor using zinc phthalocyanine. Bull Mater Sci 37, 95–99 (2014). https://doi.org/10.1007/s12034-014-0616-y

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  • DOI: https://doi.org/10.1007/s12034-014-0616-y

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