Abstract
We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately 15–30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of (αhv)2 vs hv with band gaps of 1.30 and 1.27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device.
Similar content being viewed by others
References
Alvisatos A P 1996 Science 271 933
Beard M C 2011 J. Phys. Chem. Lett. 2 1282
Chao H Y, Cheng J H, Lu J Y, Chang Y H, Cheng C L and Chen Y F 2010 Superlattices Microstruct. 47 160
Chen D, Yang D, Wang Q and Jiang Z 2006 Ind. Eng. Chem. Res. 45 4110
Chen J, Wu J, Lei W, Song J L, Deng W Q and Sun X W 2010 Appl. Surf. Sci. 256 7438
Cheng K C, Law W C, Yong K T, Nevins J S, Watson D F, Ho H P and Prasad P N 2011 Chem. Phys. Lett. 515 254
Deepa K G and Nagaraju J 2012 Mater. Sci. Eng. B177 1023
El-Nahass M M, Zeyada H M, Aziz M S and El-Ghamaz N A 2002 Opt. Mater. 20 159
Ganesh T, Mane R S, Cai G, Chang J H and Han S H 2009 J. Phys. Chem. C113 7666
Georgekutty R, Seery M K and Pillai S C 2008 J. Phys. Chem. C112 13563
Goswami A and Mandale A B 1978 Jpn. J. Appl. Phys. 17 473
Grey I E, Li C and Macrae C 1996 J. Solid State Chem. 127 240
Hamanaka Y, Ogawa T and Tsuzuki M 2011 J. Phys. Chem. C 115 1786
Hu L and Chen G 2007 Nano Lett. 7 3249
Kahn M L, Monge M, Collière V, Senocq F, Maisonnat A and Chaudret B 2005 Adv. Funct. Mater. 15 458
Kamat P V 2008 J. Phys. Chem. C112 18737
Kongkanand A, Tvrdy K, Takechi K, Kuno M and Kamat P 2008 J. Am. Chem. Soc. 130 4007
Lin M C and Lee M W 2011 Electrochem. Commun. 13 1376
Liu Y, Yu Y X and Zhang W D 2013 J. Alloys Compd. 569 102
Luke T L, Wolcott A, Xu L P, Chen S, Wen Z, Li J, Rosa E D L and Zhang J Z 2008 J. Phys. Chem. C112 1282
Majidi H and Baxter J B 2011 Electrochim. Acta 56 2703
Miyauchi M 2011 Chem. Phys. Lett. 514 151
Mu L X, Shi W S, Zhang T P, Zhang H Y, Wang Y, She G W, Gao Y H, Wang P F, Chang J C and Lee S T 2011 Appl. Phys. Lett. 98 163101
Murray C B, Kagan C R and Bawendi M G 2000 Annu. Rev. Mater. Sci. 30 545
Okazaki K, Kubo K, Shimogaki T, Nakamura D, Higashihata M and Okada T 2011 Adv. Mater. Lett. 2 354
Oleszkiewicz J, Kisiel A and Ignatowicz S A 1988 Thin Solid Films 157 1
Panda S K, Gorai S and Chaudhuri S 2006 Mater. Sci. Eng. B129 265
Potter Jr B G and Simmons J H 1988 Phys. Rev. B37 838
Ravirajan P, Peiró A M, Nazeeruddin M K, Gräetzel M, Bradley D D C, Durrant J R and Nelson J 2006 J. Phys. Chem. B110 7635
Samal A K and Pradeep T 2010 J. Phys. Chem. C114 1796
Santra P K and Kamat P V 2012 J. Am. Chem. Soc. 134 2508
Sharma R K, Singh G, Shul Y G and Kim H 2007 Physica B390 314
Tubtimtae A, Lee M W and Wang G J 2011 J. Power Sources 196 6603
Tubtimtae A, Wu K L, Tung H Y, Lee M W and Wang G J 2010 Electrochem. Commun. 12 1158
Vogel R, Hoyer P and Weller H 1994 J. Phys. Chem. 98 3183
Vogel R, Pohl K and Weller H 1990 Chem. Phys. Lett. 174 241
Wang G, Yang X, Qian F, Zhang J Z and Li Y 2010 Nano Lett. 10 1088
Yu W, Qu L, Guo W and Peng X 2003 Chem. Mater. 15 2854
Zhu G, Lv T, Pan L, Sun Z and Sun C 2011 J. Alloys Compd. 509 362
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Tubtimtae, A., Sheangliw, S., Hongsith, K. et al. Boron-doped MnTe semiconductor-sensitized ZnO solar cells. Bull Mater Sci 37, 1477–1483 (2014). https://doi.org/10.1007/s12034-014-0099-x
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12034-014-0099-x