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Bulletin of Materials Science

, Volume 36, Issue 4, pp 619–622 | Cite as

Investigation of localization effect in GaN-rich InGaN alloys and modified band-tail model

  • CHUAN-ZHEN ZHAOEmail author
  • BIN LIU
  • DE-YI FU
  • HUI CHEN
  • MING LI
  • XIANG-QIAN XIU
  • ZI-LI XIE
  • SHU-LIN GU
  • YOU-DOU ZHENG
Article

Abstract

The temperature-dependent PL properties of GaN-rich In x Ga1 − x N alloys is investigated and S-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples A and B are different from that in sample C. For samples A and B, In content fluctuations should be the origin of localization effect, while the localization effect can be attributed to In-rich clusters and metallic indium inclusions for sample C. In addition, the band-tail model is modified and the modified band-tail model is used to investigate the degree of localization effect in the three samples.

Keywords

InGaN localization effect temperature dependence modified band-tail model 

Notes

Acknowledgement

This work is supported by the National Natural Science Foundation of China (60906025).

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Copyright information

© Indian Academy of Sciences 2013

Authors and Affiliations

  • CHUAN-ZHEN ZHAO
    • 1
    Email author
  • BIN LIU
    • 2
  • DE-YI FU
    • 2
  • HUI CHEN
    • 2
  • MING LI
    • 2
  • XIANG-QIAN XIU
    • 2
  • ZI-LI XIE
    • 2
  • SHU-LIN GU
    • 2
  • YOU-DOU ZHENG
    • 2
  1. 1.School of Electronics and Information EngineeringTianjin Polytechnics UniversityTianjinChina
  2. 2.Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructures, Department of PhysicsNanjing UniversityNanjingChina

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