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Laser annealing of sputter-deposited a-SiC and a-SiC x N y films

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Abstract

This work describes the laser annealing of a-SiC and a-SiC x N y films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of a-SiC x N y thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiC x N y films.

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Authors and Affiliations

  1. Plasmas and Processes Laboratory, Technological Institute of Aeronautics, SJ dos Campos, Brazil

    M. A. Fraga, M. Massi & I. C. Oliveira

  2. Institute for Advanced Studies, SJ dos Campos, Brazil

    F. D. Origo & W. Miyakawa

Authors
  1. M. A. Fraga
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  2. M. Massi
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  3. I. C. Oliveira
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  4. F. D. Origo
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  5. W. Miyakawa
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Correspondence to M. A. Fraga.

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Fraga, M.A., Massi, M., Oliveira, I.C. et al. Laser annealing of sputter-deposited a-SiC and a-SiC x N y films. Bull Mater Sci 34, 1375–1378 (2011). https://doi.org/10.1007/s12034-011-0331-x

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  • DOI: https://doi.org/10.1007/s12034-011-0331-x

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