Abstract
Nano porous silicon (PS) was formed on p-type monocrystalline silicon of 2–5 Ω cm resistivity and (100) orientation by electrochemical anodization method using HF and ethanol as the electrolytes. High density of surface states, arising due to its nano structure, is responsible for the uncontrolled oxidation in air and for the deterioration of the PS surface with time. To stabilize the material PS surface was modified by a simple and low cost chemical method using PdCl2 solution at room temperature. X-ray photoelectron spectroscopy (XPS) was performed to reveal the chemical composition and the relative concentration of palladium on the nanoporous silicon thin films. An increase of SiO2 formation was observed after PdCl2 treatment and presence of palladium was also detected on the modified surface. I–V characteristics of Al/PS junction were studied using two lateral Al contacts and a linear relationship was obtained for Pd modified PS surface. Stability of the contact was studied for a time period of around 30 days and no significant ageing effect could be observed.
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Acknowledgements
The first author thankfully acknowledges the Council of Scientific and Industrial Research (CSIR), Govt. of India, for providing a Senior Research Fellowship. The authors sincerely thank Prof. Anita Lloyd Spetz and Mr Palash Basu for their kind cooperation.
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KANUNGO, J., SELEGÅRD, L., VAHLBERG, C. et al. XPS study of palladium sensitized nano porous silicon thin film. Bull Mater Sci 33, 647–651 (2010). https://doi.org/10.1007/s12034-011-0138-9
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DOI: https://doi.org/10.1007/s12034-011-0138-9