Bulletin of Materials Science

, Volume 33, Issue 3, pp 221–226

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

  • Mahesh Kumar
  • T. N. Bhat
  • M. K. Rajpalke
  • B. Roul
  • P. Misra
  • L. M. Kukreja
  • Neeraj Sinha
  • A. T. Kalghatgi
  • S. B. Krupanidhi
Article

DOI: 10.1007/s12034-010-0034-8

Cite this article as:
Kumar, M., Bhat, T.N., Rajpalke, M.K. et al. Bull Mater Sci (2010) 33: 221. doi:10.1007/s12034-010-0034-8

Abstract

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed.

Keywords

Nitrides nano-flowers photoluminescence RF-MBE 

Copyright information

© Indian Academy of Sciences 2010

Authors and Affiliations

  • Mahesh Kumar
    • 1
    • 2
  • T. N. Bhat
    • 1
  • M. K. Rajpalke
    • 1
  • B. Roul
    • 1
    • 2
  • P. Misra
    • 3
  • L. M. Kukreja
    • 3
  • Neeraj Sinha
    • 4
  • A. T. Kalghatgi
    • 2
  • S. B. Krupanidhi
    • 1
  1. 1.Materials Research CentreIndian Institute of ScienceBangaloreIndia
  2. 2.Central Research LaboratoryBharat ElectronicsBangaloreIndia
  3. 3.Laser Materials Processing DivisionRaja Ramanna Centre for Advanced TechnologyIndoreIndia
  4. 4.Office of Principal Scientific AdvisorGovernment of IndiaNew DelhiIndia

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