Abstract
The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol-gel technique. The films were (0.62 μm thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well crystallized prior to and after electron irradiation. However, local amorphization was observed after irradiation. There is an appreciable change in the dielectric constant after irradiation with different delivered doses. The dielectric loss showed significant frequency dispersion for both unirradiated and electron irradiated films. T c was found to shift towards higher temperature with increasing delivered dose. The effect of radiation induced increase of ɛ′(T) is related to an internal bias field, which is caused by radiation induced charges trapped at grain boundaries. The double butterfly loop is retained even after electron irradiation to the different delivered doses. The broader hysteresis loop seems to be related to radiation induced charges causing an enhanced space charge polarization. Radiation-induced oxygen vacancies do not change the general shape of the AFE hysteresis loop but they increase P s of the hysteresis at the electric field forced AFE to FE phase transition. We attribute the changes in the dielectric properties to the structural defects such as oxygen vacancies and radiation induced charges. The shift in T C, increase in dielectric constant, broader hysteresis loop, and increase in P r can be related to radiation induced charges causing space charge polarization. Double butterfly and hysteresis loops were retained indicative of AFE nature of the films.
Similar content being viewed by others
References
Angadi B, Jali V M, Lagare M T, Kini N S, Umarji A M, Ravi Kumar, Arora S K and Kanjilal D 2002 Nucl. Instrum. & Meth. Phys. Res. B187 87
Angadi B, Jali V M, Lagare M T, Bhat V V, Umarji A M and Ravi Kumar 2003a Rad. Meas. 36 635
Angadi B, Victor P, Jali V M, Lagare M T, Ravi Kumar and Krupanidhi S B 2003b Mater. Sci. Eng. B100 93
Angadi B, Victor P, Jali V M, Lagare M T, Ravi Kumar and Krupanidhi S B 2003c Thin Solid Films 434 40
Berlincourt D, Jaffe H, Krueger H H A and Jaffe B 1963 Appl. Phys. Letts 3 90
Berlincourt D, Krueger H H A and Jaffe B 1964 J. Phys. Chem. Solids 25 659
Bittner R, Humer K, Wever H W, Kundzins K, Sternberg A, Lesnyh D A, Kulikov D V and Trushin Y V 2004 J. Appl. Phys. 96 3239
Dai K, Li J F and Viehland D 1995 Phys. Rev. B51 2651
Francombe M H 1972 Thin Solid Films 13 413
Gaskey C J, Udayakumar K R, Chen H D and Cross L E 1995 J. Mater. Res. 10 2764
Jaffe B 1961 Proc. IRE 49 1264
Jali V M, Aparna S, Apurba Laha, Ganesh and Krupanidhi S B 2004 NSFD-XIII Proceedings (University of Delhi)
Jali V M, Aparna S, Ganesh Sanjeev and Krupanidhi S B 2007 Nucl. Instrum. & Meth. Phys. Res. B257 505
Jayanta Parui and Krupanidhi S B 2006 J. Appl. Phys. 100 044102
Pai N G, Xu B and Cross L E 1998 Integr. Ferroelectr. 22 501
Shirane G and Hoshino S 1954 Acta Crystallogr. 71 203
Shirane G, Swaguchi E and Takagi Y 1951 Phys. Rev. 84 476
Shirane G, Swaguchi E and Takagi Y 1957 Phys. Rev. 105 849
Shih W V, Shih W H and Aksay I A 1994 Phys. Rev. B50 15575
Teslic S and Egami T 1998 Acta Crystallogr. Struct. Sci. B854 750
Uchino K and Nomura S 1983 Ferroelectrics 50 1913
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Aparna, S., Jali, V.M., Sanjeev, G. et al. Dielectric properties of electron irradiated PbZrO3 thin films. Bull Mater Sci 33, 191–196 (2010). https://doi.org/10.1007/s12034-010-0029-5
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12034-010-0029-5