Abstract
Junctions of silver-copper oxide and silver-zinc oxide, respectively were prepared within the pores of diameters, 20 nm, in anodic aluminium oxide membranes. Voltage-current characteristics were measured over the temperature range 373–573 K which showed rectification behaviour. Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure generated as a result of thermal expansion of the metallic phases concerned between the electrodes. This is consistent with the theoretical prediction of Fermi level shifting of the semiconductor within the bandgap as a function of pressure.
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Dedicated to Prof. C N R Rao
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Bose, A., Chatterjee, K. & Chakravorty, D. Metal-semiconductor nanojunctions and their rectification characteristics. Bull Mater Sci 32, 227–230 (2009). https://doi.org/10.1007/s12034-009-0034-8
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DOI: https://doi.org/10.1007/s12034-009-0034-8