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Simulation studies on the effect of a buffer layer on the external parameters of hydrogenated amorphous silicon p-i-n solar cells

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Abstract

Device modeling of p-i-n junction amorphous silicon solar cells has been carried out using the amorphous semiconductor analysis (ASA) simulation programme. The aim of the study was to explain the role of a buffer layer in between the p-and i-layers of the p-i-n solar cell on the external parameters such as dark current density and open circuit voltage. Investigations based on the simulation of dark I–V characteristics revealed that as the buffer layer thickness increases the dark current for a given voltage decreases.

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Authors and Affiliations

  1. Department of Instrumentation, Cochin University of Science & Technology, Kochi, 682 022, India

    K. Rajeev Kumar & M. Zeman

  2. Laboratory of Electronic Components, Technology and Materials, Delft University of Technology-DIMES, P.O. Box 5053, 2600 GB, Delft, The Netherlands

    M. Zeman

Authors
  1. K. Rajeev Kumar
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  2. M. Zeman
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Correspondence to K. Rajeev Kumar.

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Rajeev Kumar, K., Zeman, M. Simulation studies on the effect of a buffer layer on the external parameters of hydrogenated amorphous silicon p-i-n solar cells. Bull Mater Sci 31, 737–739 (2008). https://doi.org/10.1007/s12034-008-0116-z

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  • DOI: https://doi.org/10.1007/s12034-008-0116-z

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