Abstract
The thin films of In-Sb having different thicknesses of antimony keeping constant thickness of indium was deposited by thermal evaporation method on ITO coated conducting glass substrates at room temperature and a pressure of 10−5 torr. The samples were annealed for 1 h at 433 K at a pressure of 10−5 torr. The optical transmission spectra of as deposited and annealed films have been carried out at room temperature. The variation in optical band gap with thickness was also observed. Rutherford back scattering and X-ray diffraction analysis confirms mixing of bilayer system. The transverse I-V characteristic shows mixing effect after annealing at 433 K for 1 h. This study confirms mixing of bilayer structure of semiconductor thin films.
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Mangal, R.K., Vijay, Y.K. Study of annealing effects in In-Sb bilayer thin films. Bull Mater Sci 30, 117–121 (2007). https://doi.org/10.1007/s12034-007-0021-x
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DOI: https://doi.org/10.1007/s12034-007-0021-x