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Effect of C/B ratio in reactants on low-pressure CVD boron-doped carbon deposited from a BCl3–C3H6–H2 mixture

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Abstract

Propylene was used to fabricate boron-doped carbon coatings by low-pressure chemical vapor deposition. The effects of carbon/boron (C/B) ratio in reactants on the deposition rate, morphologies, and bonding states of the deposits were investigated. Deposition rate increased with increasing C/B ratio, when C/B ratio was less than 4.0. Then, deposition rate decreased with increasing C/B ratio. The maximum rate was 500 nm/h. SEM results showed that cross section morphologies and thickness of deposits were influenced by C/B ratio. Morphologies were compact and not-delaminated with a low C/B ratio, however nanoscale delamination occurred in the deposits with a high C/B ratio. The infiltration characteristic was also influenced by the C/B ratio. The suitable C/B ratio was 1.0–2.0 for infiltration in a T300 carbon bundle. XPS results showed that carbon content is major in the deposits with all C/B ratios. The boron contents decreased and carbon contents increased with increasing C/B ratio. B-sub-C and BC2O were main bonding states. The total contents of B-sub-C and BC2O were above 60.0 at.% with all C/B ratios.

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Acknowledgments

This work was supported by the National Science Foundation in China (No. 90405015, No. 50672076, No. 50425208, and No. 50642039, No. 50802076). This work was also supported by the Doctorate Foundation of Northwestern Polytechnical University (CX200505).

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Authors and Affiliations

  1. National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, Xi’an, Shaanxi, 710072, People’s Republic of China

    Yongsheng Liu, Litong Zhang, Laifei Cheng, Wenbin Yang, Yongdong Xu & Qingfeng Zeng

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  1. Yongsheng Liu
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  2. Litong Zhang
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  3. Laifei Cheng
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  4. Wenbin Yang
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Correspondence to Yongsheng Liu.

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Liu, Y., Zhang, L., Cheng, L. et al. Effect of C/B ratio in reactants on low-pressure CVD boron-doped carbon deposited from a BCl3–C3H6–H2 mixture. J Coat Technol Res 6, 509–515 (2009). https://doi.org/10.1007/s11998-008-9128-2

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