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Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition

  • Chemistry and Physics
  • Published:
Wuhan University Journal of Natural Sciences

Abstract

GeSi:H films are prepared by hot-wire chemical vapor deposition (CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature (Tw) on deposition rate, structural properties and bandgap of GeSi:H films are studied with surface profilemeter, Raman spectroscopy, Fourier transformed infrared spectroscopy, and UV-VIS-NIR spectrophotometer. It is found that the deposition rate (Rd) goes up with increasing of Tw, but increasing rate of Rd declines when Tw⩾1 550 °C. High Tw is beneficial to the formation of Ge-Si, but it has little effect on relative contents of the hydrogen bonds (Ge-H, Si-H, etc.) in the films. In the Tw range of 1 400–1 850 °C, the maximum bandgap of the GeSi:H films is 1.39 eV at Tw =1 450 °C and the band gap decreases with Tw increasing when Tw⩾1 450 °C.

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Authors and Affiliations

  1. Institute of Photovoltaics, Nanchang University, Nanchang, Jiangxi, 330031, China

    Xin Tai & Haibin Huang

  2. China Intellectual Electric Power Technology (Taixing) Co. Ltd., Taixing, Jiangsu, 225400, China

    Xingbing Li & Huang Zhen

  3. Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing, Jiangsu, 211100, China

    Honglie Shen & Yufang Li

Authors
  1. Xin Tai
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  2. Xingbing Li
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  3. Huang Zhen
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  4. Honglie Shen
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  5. Yufang Li
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  6. Haibin Huang
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Corresponding author

Correspondence to Haibin Huang.

Additional information

Foundation item: Supported by the National Key Research and Development Program of China (2018YFB1500400-2018YFB1500403), the National Natural Science Foundation of China (61741404, 61464007), and the Jiangxi Provincial Key Research and Development Foundation (2016BBH80043)

Biography: TAI Xin, male, Master candidate, research direction: crystallized silicon solar cell.

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Tai, X., Li, X., Zhen, H. et al. Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition. Wuhan Univ. J. Nat. Sci. 24, 405–408 (2019). https://doi.org/10.1007/s11859-019-1413-7

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  • DOI: https://doi.org/10.1007/s11859-019-1413-7

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