Skip to main content
Log in

Investigation on the synthesis mechanism of β-FeSi2 prepared by pulsed laser deposition

  • Published:
Wuhan University Journal of Natural Sciences


The FeSi2 target alloy was fabricated by conventional powder metallurgy technology, and then, β-FeSi2 thin films was successfully prepared by pulsed laser deposition (PLD). X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) were used to characterize the structure, composition, and their changes in the process of β-FeSi2 preparation. In addition, a laser sintering process was also employed to prepare FeSi2 alloy. The analysis of radiation heat transfers in different-sized FeSi2 melt indicates that the cooling rate of the melt depends on the size, i.e., the cooling rate of the micron sized melt is 103 times greater than that of the millimeter-sized melt. The product α-FeSi2 by laser sintering and β-FeSi2 by PLD reveals the different phase transition process in crystallization of millimeter-sized and micron-sized (or submicron-sized) FeSi2 melt. The results of PLD preparation process shows that β-FeSi2 could be prepared through a liquid-phase sintering, followed by a rapid cooling.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others


  1. Zhang J, Xie Q, Yu P, et al. Preparation of α-FeSi2 by laser annealing [J]. Thin Solid Films, 2008, 516(23): 8625–8628.

    Article  Google Scholar 

  2. Tan K H, Chi D Z, Pey K L. Optical and electrical characterization of sputter deposited FeSi2 and its evolution with annealing temperature [J]. J Appl Phys, 2008, 104(6): 064117.

    Article  Google Scholar 

  3. Gao Y, Shao G, Chen R S, et al. TEM study of self-assembled FeSi2 nano-structures by ion beam implantation [J]. Solid State Commu, 2009, 149(3–4): 97–100.

    Article  Google Scholar 

  4. Naito M, Ishimaru M. Early stage of the crystallization in amorphous Fe-Si layers: Formation and growth of metastable α-FeSi2 [J]. Nuclear Instruments and Methods in Physics Research B, 2009, 267: 1290–1293.

    Article  Google Scholar 

  5. Zhou Youhua, Lu Peixiang, Long Hua, et al. β-FeSi2/Si(111) thin films prepared by pulsed laser deposition [J]. Chinese Journal of Lasers, 2006, 33(9): 1277–1281(Ch).

    Google Scholar 

  6. Akiyama K, Kaneko S, Funakubo H, et al. 1.54 μm photoluminescence from β-FeSi2 as-deposited film [J]. Appl Phys Lett, 2007, 91(7): 071903.

    Article  Google Scholar 

  7. Man B Y, Xu S C, Yang C, et al. Effect of the laser fluence on the surface characterization of β-FeSi2 films prepared by pulsed laser deposition [J]. Appl Surf Sci, 2011, 257(15): 6321–6325.

    Article  Google Scholar 

  8. Grimaldi M G, Baeri P, Spinella C, et al. Liquid phase epitaxy of cubic FeSi2 on (111) Si induced by pulsed laser irradiation [J]. Appl Phys Lett, 1992, 60(9): 1132–1134.

    Article  Google Scholar 

  9. Liu Z, Okoshi M, Hanabusa M. Formation of β-FeSi2 films by pulsed laser deposition using iron target [J]. J Vac Sci Technol A, 1999, 17(2): 619–623.

    Article  Google Scholar 

  10. Yoshitake T, Nagamoto T, Nagayama K. Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser deposition [J]. Mater Sci Eng B, 2000, 72: 124–127.

    Article  Google Scholar 

  11. Komuro S, Katsumata T, Morikawa T, et al. Formation of β-FeSi2 thin films using laser ablation [J]. J Crystal Growth, 2002, 237–239(3): 1961–1965.

    Article  Google Scholar 

  12. Gamaly E G, Rode A V, Davies B L. Ultrafast Ablation and Film Deposition, in Pulsed Laser Deposition of Thin Films, Applications-LED Growth of Functional Materials [M] edited by Robert Eason. John Wiley & Sons, 2007: 99–130.

  13. Yamane H, Yamada T. Effects of stacking fault on the diffraction intensities of β-FeSi2 [J]. J Alloys Compd, 2009, 476(1–2): 282–287.

    Article  Google Scholar 

  14. Udono H, Takaku S, Kikuma I. Crystal growth of β-FeSi2 by temperature gradient solution growth method using Zn solvent [J]. J Crystal Growth, 2002, 237–239(3): 1971–1975.

    Article  Google Scholar 

  15. Ito M, Nagai H, Katsuyama S, et al. Effects of Ti, Nb and Zr doping on thermoelectric performance of β-FeSi2 [J]. J Alloys Compd, 2001, 315: 251–258.

    Article  Google Scholar 

  16. Zhou Youhua, Chen Xianjuan, Qiao Yan, et al. Experiment investigation of femtosecond pulse laser deposition [J]. J Jianghan University (Natural Sciences), 2007, 35(4): 33–37 (Ch).

    Google Scholar 

  17. Taylor and Francis Group. CRC Handbook of Chemistry and Physics [EB/OL].[2010-11-24]. .

Download references

Author information

Authors and Affiliations


Corresponding author

Correspondence to Youhua Zhou.

Additional information

Foundation item: Supported by the Special Funds for Major State Basic Research Project of China (G90923013) and the Natural Science Foundation of Department of Education of Hubei Province (20091002-176)

Biography: ZHOU Youhua, male, Ph. D., Associate professor, research direction: electronic materials, semiconductor physics and devices.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhou, Y., Nie, C., Tian, H. et al. Investigation on the synthesis mechanism of β-FeSi2 prepared by pulsed laser deposition. Wuhan Univ. J. Nat. Sci. 17, 61–66 (2012).

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI:

Key words

CLC number