Abstract
This paper takes full advantages of the I–V transconductance characteristics of metal-oxide semiconductor field effect transistor (MOSFET) operating in the subthreshold region and the enhancement pre-regulator technique with the high gain negative feedback loop. The proposed reference circuit, designed with the SMIC 0.18 μm standard complementary metal-oxide semiconductor (CMOS) logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient (TC) of 2.5×10−4 μA /°C in the temperature range of −40 to 150 °C at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about − 126 dB at DC frequency and remains −92 dB at the frequency higher 100 MHz. Moreover the proposed reference circuit operates stably at the supply voltage higher 1.2 V and has good process compatibility.
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References
Mehr I, Singer L. A 55-mW, 10-bit, 40-Msample/s Nyquist-Rate CMOS ADC [J]. IEEE Journal of Solid State Circuits, 2000, 35(3): 318–325.
Ware K M, Lee H S. A 200 MHz CMOS Phase-Lock Loop with Dual Phase Detector [J]. IEEE Journal of Solid State Circuits, 1989, 24(6): 1560–1568.
Razavi B. Design of Analog CMOS Integrated Circuits [M]. New York: McGraw-Hill, 2001.
Banba H, Shiga H. A CMOS Bandgap Reference Circuit with Sub 1-V Operation [J]. IEEE Journal of Solid State Circuits, 1999, 34:670–674.
Ahuja B K, Vu H. A very High Precision 500-nA CMOS Floating-Gate Analog Voltage Reference [J]. IEEE Journal of Solid State Circuits, 2005, 40(12):2364–2372.
Chen J, Shi B. 1-V CMOS Current Reference with 50 ppm/°C Temperature Coefficient [J]. Electronics Letters, 2003, 39(2): 209–210.
James T. Low Power Digital CMOS Compatible Bandgap Reference: U.S. patent 6075407 [P]. 2000-07-10.
Giustolisi G, Palumbo G. A Low-Voltage Low-Power Voltage Reference Based on Subthreshold MOSFETs [J]. IEEE Journal of Solid State Circuits, 2003, 38:151–154.
Filanovsky I M, Allam A. Mutual Compensation of Mobility and Threshold Voltage Temperature Effects with Applications in CMOS Circuits [J]. IEEE Trans Circuits Syst, 2001, 48: 876–884.
Taur Y, Ning T H. Fundamentals of Modern VLSI Devices [M]. New York: Cambridge University Press, 1998.
Tsividis Y P. Operation and Modeling of the MOS Transistor [M]. New York: McGraw-Hill, 1999.
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Foundation item: Supported by the National Natural Science Foundation of China (60376019)
Biography: YU Guoyi (1973– ), male, Lecturer, Post Doctor, research direction: low-voltage high precision mixed-signal integrated circuits design and RFICs.
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Yu, G., Jin, H. & Zou, X. Novel high PSRR current reference based on subthreshold MOSFETs. Wuhan Univ. J. Nat. Sci. 13, 71–74 (2008). https://doi.org/10.1007/s11859-008-0114-4
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DOI: https://doi.org/10.1007/s11859-008-0114-4