Abstract
The insertion of advanced microwave devices into high-volume applications is critically dependent upon a robust and reproducible epitaxial growth technology accompanied with a reproducible process technology. The precise control of the material and device parameters is essential to maintain a high-yield process, which leads to a low-cost product. Although AlGaAs/GaAs heterojunction bipolar transistors have been widely demonstrated in many company research laboratories and universities, the transition from a laboratory environment to high-volume production requires a thorough understanding of the metalorganic chemical vapor deposition growth process and its correlation with device performance. In this work, high-performance AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD with excellent control in the device parameter tolerances have been demonstrated in very high volumes.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
N. Hayama et al., “High Efficiency, Small Chip AlGaAs/GaAs Power HBT for Low Voltage Cellular Phones,” Proc. IEEE MTTS International Microwave Symp. Dig. (New York: IEEE, 1997), pp. 1307–1310.
K. Wang et al., “AlGaAs/GaAs HBT for Analog and Digital Applications,” Current Trends in HBT (Singapore: World Scientific, 1996), pp. 59–98.
K. Weller, “Application of AlGaAs/GaAs HBT Technology to Power Amplification in Wireless Systems,” Proc. Symp. on High Speed Elec. For Wireless Applications (New York: IEEE, 1996), pp. 93–100.
C.W. Kim et al., “High Linearity and Small Chip AlGaAs/GaAs Power HBT for L-Band Personal Digital Cellular Applications,” IEEE Elec. Dev. Lett., 18 (1997), p. 147.
T. Miura et al., “High Efficiency AlGaAs Power HBT at Low Supply Voltage for Digital Cellular Phones,” Proc. GaAs IC Symp. (New York: IEEE, 1996), pp. 91–94.
S. Hara et al., “High Efficiency AlGaAs/GaAs Power HBT Amplifier MMIC for 1.9GHz Japanese Digital Cordless Phone,” Proc. IEEE Microwave and Millimeter Wave Monolithic Circuits Symp. (New York: IEEE, 1993), pp. 19–22.
Author information
Authors and Affiliations
Additional information
N. Pan earned his Ph.D. in electrical engineering at the University of Illinois in 1988. He is currently chief scientist at Kopin Corporation. Dr. Pan is a member of TMS.
D. Hill earned his M.S. in materials science at the Polytechnic Institute of New York in 1986. He is currently vice president of epioperations at Kopin Corporation. Mr. Hill is also member of TMS.
C. Rose earned his M.S. in advanced manufacturing engineering at Worcester Polytechnic Institute in 1990. He is currently a quality assurance engineer at Kopin Corporation.
R. McCullough earned his A.S. in mechanical design engineering at Wentworth Institute of Technology in 1970. He is currently engineering manager at Kopin Corporation.
P. Rice earned his BSEET in electrical engineering at Wentworth Institute of Technology in 1990. He is currently a characterization engineer at Kopin Corporation.
D.P. Vu earned his Ph.D. in solid-state physics at Louis Pasteur Institute in 1983. He is currently a principal scientist at Kopin Corporation.
K. Hong earned his Ph.D. in electrical engineering at the University of Michigan in 1996. He is currently an electronic design engineer at Rockwell Semiconductor Systems.
C. Farley earned his Ph.D. in engineering at the University of Texas at Austin in 1986. He is currently manager, advanced device technology, at Rockwell Semiconductor Systems.
Rights and permissions
About this article
Cite this article
Pan, N., Hill, D., Rose, C. et al. The high-volume production of heterojunction bipolar transistors. JOM 50, 45–47 (1998). https://doi.org/10.1007/s11837-998-0459-3
Issue Date:
DOI: https://doi.org/10.1007/s11837-998-0459-3