Abstract
Controlled spalling is a technology to prepare single-crystal thin films of semiconductors by fracture with a subsurface crack propagating nearly parallel to the substrate surface. Practical applications require uniform thickness and a smooth surface across the whole film. Both wafer-scale and patterned-stressor-defined small-area spalling of germanium substrates are conducted experimentally and numerically. River line features are observed on spalled surfaces close to lateral edges of the spall, regardless of the spall direction and the size of the spalled area. Three-dimensional finite element method modeling shows the river lines are caused by mixed mode I + III loading near the lateral edges of spall and predicts a spall depth variation near the lateral edges of spall due to mixed mode I + II loading. The absolute range of river lines increases with lateral size of spall, while the relative range of river lines decreases, consistent with variations in mode mixity.
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Acknowledgements
The work was supported by the Air Force Research Laboratory under an agreement with the National Renewable Energy Laboratory. This work was authored in part by the National Renewable Energy Laboratory, operated by Alliance for Sustainable Energy, LLC, for the US Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. The views expressed in the article do not necessarily represent the views of the DOE or the US Government. The US Government retains and the publisher, by accepting the article for publication, acknowledges that the US Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for US Government purposes.
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Chen, J., Chenenko, J. & Packard, C.E. Impacts of Mode Mixity on Controlled Spalling of (100)-Oriented Germanium. JOM 73, 1607–1616 (2021). https://doi.org/10.1007/s11837-021-04639-5
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DOI: https://doi.org/10.1007/s11837-021-04639-5