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Crystal Plasticity Modeling of Void Growth on Grain Boundaries in Ni-Based Superalloys

  • Crystal Orientation Dependence of Mechanical and Thermal Properties in Functional Nanomaterials
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Abstract

In this work, we explore the effect of misorientation angles of crystal orientations between two grains along the grain boundary (GB) on void growth behavior in polycrystalline Ni-based superalloys by using a crystal plasticity finite element method. Quantitative analysis is conducted to study the coupled roles of the crystal orientation and stress triaxiality in void growth in bicrystals. Based on our simulation results, we find that, as the main loading axis perpendicular to the GB, voids grow more slowly on tilt GBs in bicrystals than those in single and bicrystal samples with twist GBs, while the void growth in single- and bicrystal samples with twist GBs exhibited almost the same rate and increased with the stress triaxiality levels. The interaction between two crystals bonded with the GB activates the effective Schmid factors in each crystal, which results in asymmetric distribution of the equivalent plastic strain around the void and induces distinct irregularly shaped voids during deformation.

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Acknowledgements

This work was supported by grants from the DOE-NETL Crosscutting Research Program (No. FE0031554).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA

    Tianju Chen & Caizhi Zhou

  2. Department of Physics, Astronomy and Materials Science, Missouri State University, Springfield, MO, 65897, USA

    Ridwan Sakidja

  3. Department of Physics and Astronomy, University of Missouri Kansas City, Kansas City, MO, 64110, USA

    Wai-Yim Ching

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  1. Tianju Chen
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  2. Ridwan Sakidja
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  4. Caizhi Zhou
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Correspondence to Caizhi Zhou.

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Chen, T., Sakidja, R., Ching, WY. et al. Crystal Plasticity Modeling of Void Growth on Grain Boundaries in Ni-Based Superalloys. JOM 71, 3859–3868 (2019). https://doi.org/10.1007/s11837-019-03694-3

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  • DOI: https://doi.org/10.1007/s11837-019-03694-3

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