Abstract
Cu/SiCP composites with high strength and high conductivity were prepared by in situ carbonization reaction of silicon. The Cu-Si powder and C powder were mechanically mixed, and in situ carbonized at 850°C for 48 h, then oxidation-treated in dry air atmosphere at 650°C for 8 h, followed by reduction-treating in hydrogen atmosphere at 500°C for 90 min. The results showed that some nano-scale and micron-scale SiCp particles as well as a small amount of nano-scale SiO2 formed during fabrication. The tensile strength, yield strength, elongation and conductivity of the hot-extruded composite were 279 MPa, 180 MPa, 22.80% and 91.48% IACS, respectively; and those of the composite treated by cold-rolling with a reduction of 80% and then annealing at 350°C for 30 min were 425 MPa, 403 MPa, 10.85% and 90.15% IACS, respectively.
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Acknowledgements
The authors acknowledge the financial support by the National key R & D program of China (Grant No. 2016YFB0301301), National Natural Science Foundation of China (Grant Nos. U1637210 & 51601227), Natural Science Foundation of Hunan Province (Grant No. 2018JJ3650), and the Project of State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China.
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Xiang, T., Dai, J., Qiu, W. et al. Cu/SiCP Composites Prepared by In-Situ Carbonization Synthesis. JOM 71, 2513–2521 (2019). https://doi.org/10.1007/s11837-019-03483-y
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DOI: https://doi.org/10.1007/s11837-019-03483-y