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Highly Ordered Good Crystalline ZnO-Doped WO3 Thin Films Suitable for Optoelectronic Applications

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Abstract

Highly ordered ZnO-doped WO3 thin films with good crystalline quality are prepared using radio frequency magnetron sputtering technique, and its morphological and structural properties are studied using various characterization tools such as field emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, x-ray diffraction technique, micro-Raman spectroscopy, and x-ray photoelectron spectroscopy. Morphological analysis shows a smooth surface for pure film, whereas the ZnO-doped films presents a dense distribution of grains of larger sizes with well-defined grain boundary. X-ray diffraction studies reveal the enhancement of crystalline quality of the films with increase in ZnO doping concentration up to 5 wt.%, beyond which the crystalline quality gets deteriorated. A phase modification from a single monoclinic WO3 phase to mixed monoclinic WO3 and W18O49 phases is observed for films with higher ZnO doping concentrations.

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Authors and Affiliations

  1. Department of Optoelectronics, University of Kerala, Kariavattom, Thiruvananthapuram, Kerala, 695581, India

    V. S. Kavitha, R. Jolly Bose, R. Sreeja Sreedharan & V. P. Mahadevan Pillai

  2. School of Pure and Applied Physics, Mahatma Gandhi University, Priyadarsini Hills, Kottayam, Kerala, 686560, India

    C. Sudarsanakumar

  3. School of Engineering, Robert Gordon University, Aberdeen, UK

    Radhakrishna Prabhu

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  1. V. S. Kavitha
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Kavitha, V.S., Bose, R.J., Sreedharan, R.S. et al. Highly Ordered Good Crystalline ZnO-Doped WO3 Thin Films Suitable for Optoelectronic Applications. JOM 71, 1874–1884 (2019). https://doi.org/10.1007/s11837-019-03425-8

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