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JOM

, Volume 70, Issue 5, pp 739–746 | Cite as

Effect of Electron Beam Irradiation on Structural and Optical Properties of Cu-Doped In2O3 Films Prepared by RF Magnetron Sputtering

  • R. Reshmi Krishnan
  • Ganesh Sanjeev
  • Radhakrishna Prabhu
  • V. P. Mahadevan Pillai
Technical Communication

Abstract

Undoped and Cu-doped In2O3 films were prepared by radiofrequency magnetron sputtering technique. The effects of Cu doping and high-energy electron beam irradiation on the structural and optical properties of as-prepared films were investigated using techniques such as x-ray diffraction, x-ray photoelectron spectroscopy (XPS), lateral scanning electron microscopic image analysis, energy-dispersive x-ray (EDX) spectroscopy, micro-Raman, and ultraviolet–visible (UV–vis) spectroscopy. Moderate doping of Cu in In2O3 enhanced the intensity of (222) peak, indicating alignment of crystalline grains along <111>. Electron beam irradiation promoted orientation of crystalline grains along <111> in undoped and moderately Cu-doped films. EDX spectroscopic and XPS analyses revealed incorporation of Cu2+ ions in the lattice. The transmittance of Cu-doped films decreased with e-beam irradiation. Systematic reduction of the bandgap energy with increase in Cu doping concentration was seen in unirradiated and electron-beam-irradiated films.

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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  • R. Reshmi Krishnan
    • 1
  • Ganesh Sanjeev
    • 2
  • Radhakrishna Prabhu
    • 3
  • V. P. Mahadevan Pillai
    • 1
  1. 1.Department of OptoelectronicsUniversity of KeralaKariavattom, ThiruvananthapuramIndia
  2. 2.Department of PhysicsMangalore UniversityMangalagangotriIndia
  3. 3.School of EngineeringRobert Gordon UniversityAberdeenUK

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