Abstract
Sputter-deposited, equiatomic PtMn thin films have application in giant magnetoresistive spin valves, tunneling magnetoresistive spin valves, and magnetic random access memory. However, the as-deposited films are found to be a disordered A1 phase in a paramagnetic state rather than an antiferromagnetic phase with L10 structure, which is needed for device operation. Therefore, a postannealing step is required to induce the phase transformation from the asdeposited A1 face-centered-cubic phase to the antiferromagnetic L10 phase. The A1 to L10 metastable transformation was studied by x-ray diffraction and differential-scanning calorimetry. An exothermic transformation enthalpy of −12.1 kJ/mol of atoms was determined. The transformation kinetics were simulated using the Johnson-Mehl-Avrami analysis.
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Ji, C.X., Ladwig, P.F., Ott, R.D. et al. An investigation of phase transformation behavior in sputter-deposited PtMn thin films. JOM 58, 50–54 (2006). https://doi.org/10.1007/s11837-006-0182-x
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DOI: https://doi.org/10.1007/s11837-006-0182-x