The pulse thermal processing of nanocrystalline silicon thin-films
Pulse thermal processing (PTP) has the capability of processing thin-films and nanoparticles over broad areas utilizing high-density infrared plasma arc lamp technology. Heating rates reaching 600,000°C/s, which is orders of magnitude larger than current state-of-the-art rapid thermal annealing systems, are possible that allow controlled diffusion on the nanoscale. The ability to control heating at these levels permits processing thin-films and nanoparticles on temperature-sensitive substrates such as polymers. The PTP technique has been used to crystallize sputtered amorphous silicon thin-films on sapphire substrates.
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- 5.D.H. Levi et al., National Renewable Energy Laboratory/CP-530-23916 (July 1998).Google Scholar
- 10.B.P. Nelson et al., NCPV and Solar Program Review Meeting 2003, NREL/CD-520-33586 (Washington D.C.: U.S. Department of Energy, 2003).Google Scholar
- 11.Science and Technology Review (November 1999), llnl.gov/str/str.html.Google Scholar
- 12.B.D. Cullity and S.R. Stock; Elements of X-ray Diffraction, 3rd ed. (Upper Saddle River, NJ: Prentice Hall Publ., 2001), p. 170.Google Scholar