The pulse thermal processing of nanocrystalline silicon thin-films
Pulse thermal processing (PTP) has the capability of processing thin-films and nanoparticles over broad areas utilizing high-density infrared plasma arc lamp technology. Heating rates reaching 600,000°C/s, which is orders of magnitude larger than current state-of-the-art rapid thermal annealing systems, are possible that allow controlled diffusion on the nanoscale. The ability to control heating at these levels permits processing thin-films and nanoparticles on temperature-sensitive substrates such as polymers. The PTP technique has been used to crystallize sputtered amorphous silicon thin-films on sapphire substrates.
KeywordsAmorphous Silicon FePt Rapid Thermal Annealing Rapid Thermal Processing FePt Nanoparticle
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