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Heptafluoroisopropyl Methyl Ether as a Low Global Warming Potential Alternative for Plasma Etching of SiC

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Abstract

Heptafluoroisopropyl methyl ether (HFE-347mmy) was used for SiC etching to evaluate low-GWP (global warming potential) hydrofluoroether as an alternative to SF6. SiC was etched in the HFE-347mmy/O2/Ar and SF6/O2/Ar plasmas, and the etching characteristics were compared at various bias voltages. The etch rates of SiC in the HFE-347mmy/O2/Ar plasma were higher than those in the SF6/O2/Ar plasma at low bias voltages (lower than − 500 V), whereas those in the SF6/O2/Ar plasma were higher than those in the HFE-347mmy/O2/Ar plasma at high bias voltages (higher than − 600 V). The relative amounts of F and O radicals in both plasmas imply that F is a major contributor to SiC etching at low bias voltages (lower than − 500 V), whereas O is a major contributor at high bias voltages (higher than − 600 V) in the HFE-347mmy/O2/Ar and SF6/O2/Ar plasmas. AFM measurements showed that the SiC etched in the HFE-347mmy/O2/Ar plasma exhibited smoother surfaces than that etched in the SF6/O2/Ar plasma.

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References

  1. R. Maboudian, C. Carraro, D.G. Senesky, C.S. Roper, J. Vac. Sci. Technol. A 31, 050805 (2013)

    Article  Google Scholar 

  2. T. Dinh, H.-P. Phan, N. Kashaninejad, T.-K. Nguyen, D.V. Dao, N.-T. Nguyen, Adv. Mater. Interfaces 5, 1800764 (2018)

    Article  Google Scholar 

  3. A. Kumar, M. Moradpour, M. Losito, W.-T. Franke, S. Ramasamy, R. Baccoli, G. Gatto, Energies 15, 9172 (2022)

    Article  CAS  Google Scholar 

  4. P.H. Yih, V. Saxena, A.J. Steckl, Phys. Status Solidi B-Basic Res. 202, 605 (2001)

    Article  Google Scholar 

  5. P.H. Yih, A.J. Steckl, J. Electrochem. Soc. 140, 1813 (1993)

    Article  CAS  Google Scholar 

  6. P.H. Yih, A.J. Steckl, J. Electrochem. Soc. 142, 312 (1995)

    Article  CAS  Google Scholar 

  7. R. Wolf, R. Helbig, J. Electrochem. Soc. 143, 1037 (1996)

    Article  CAS  Google Scholar 

  8. J.B. Casady, E.D. Luckowski, M. Bozack, D. Sheridan, R.W. Johnson, J.R. Williams, J. Electrochem. Soc. 143, 1750 (1996)

    Article  CAS  Google Scholar 

  9. B.-O. Cho, S.-W. Hwang, G.-R. Lee, S.H. Moon, J. Vac. Sci. Technol. A 18, 2791 (2000)

    Article  CAS  Google Scholar 

  10. G.-R. Lee, S.-W. Hwang, J.-H. Min, S.H. Moon, J. Vac. Sci. Technol. A 20, 1808 (2002)

    Article  CAS  Google Scholar 

  11. J.-H. Kim, C.-K. Kim, Korean J. Chem. Eng. 37, 374 (2020)

    Article  CAS  Google Scholar 

  12. J.-H. Kim, S.-W. Cho, C.J. Park, H. Chae, C.-K. Kim, Thin Solid Films 637, 43 (2017)

    Article  CAS  Google Scholar 

  13. R. Chatterjee, S. Karecki, R. Reif, V. Vartanian, T. Sparks, J. Electrochem. Soc. 149, G276 (2002)

    Article  CAS  Google Scholar 

  14. H.-K. Ryu, B.-S. Lee, S.-K. Park, I.-W. Kim, C.-K. Kim, Electrochem. Solid-State Lett. 6, C126 (2003)

    Article  CAS  Google Scholar 

  15. Y. Chinzei, Y. Feurprier, M. Ozawa, T. Kikuchi, K. Horioka, T. Ichiki, Y. Horiike, J. Vac. Sci. Technol. A 18, 158 (2000)

    Article  CAS  Google Scholar 

  16. J.-H. Kim, J.-S. Park, C.-K. Kim, Thin Solid Films 669, 262 (2019)

    Article  CAS  Google Scholar 

  17. S. You, J.-H. Kim, C.-K. Kim, Korean J. Chem. Eng. 39, 63 (2022)

    Article  CAS  Google Scholar 

  18. S. You, Y.J. Lee, H. Chae, C.-K. Kim, Coatings 12, 679 (2022)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work was supported by the Korea Evaluation Institute of Industrial Technology grant funded by the Korean Government Ministry of Trade, Industry, and Energy (grant nos. 20017456, RS-2022-00155706, 00267003, and RS-2023-00266039).

Funding

This article was funded by Korea Evaluation Institute of Industrial Technology, 20017456, Chang-Koo Kim, RS-2022-00155706, Chang-Koo Kim, 00267003, Chang-Koo Kim, RS-2023-00266039, Chang-Koo Kim.

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Authors and Affiliations

  1. Department of Chemical Engineering and Division of Energy Systems Research, Ajou University, Worldcup-ro 206, Yeongtong-gu, Suwon, 16499, Korea

    Sanghyun You, Eun Jae Sun, Yujeong Hwang & Chang-Koo Kim

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  1. Sanghyun You
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  2. Eun Jae Sun
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  3. Yujeong Hwang
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  4. Chang-Koo Kim
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Correspondence to Chang-Koo Kim.

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You, S., Sun, E.J., Hwang, Y. et al. Heptafluoroisopropyl Methyl Ether as a Low Global Warming Potential Alternative for Plasma Etching of SiC. Korean J. Chem. Eng. 41, 1307–1310 (2024). https://doi.org/10.1007/s11814-024-00158-6

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