Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
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Plasma damage of indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) was investigated. The IGZO TFT was fabricated and the performance was measured before and after BCl3 and/or Cl2 plasma treatment to evaluate the IGZO damage. The BCl3 and/or Cl2 plasma deteriorated the IGZO TFT performance significantly even after a short exposure time in the plasma. We propose a new wet etching process to remove a source/drain metal without damaging the underlying IGZO layer. The wet etching process can be utilized for the fabrication of IGZO TFT array using a roll-to-roll process via a self-aligned imprint lithography technique.
KeywordsIndium-gallium-zinc-oxide (IGZO) Thin Film Transistor (TFT) Plasma Damage Plasma Etching
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- 5.H.-J. Kim, M. Almanza-Workman, B. Garcia, O. Kwon, F. Jeffrey, S. Braymen, J. Hauschildt, K. Junge, D. Larson, D. Stieler, A. Chaiken, B. Cobene, R. Elder, W. Jackson, M. Jam, A. Jeans, H. Luo, P. Mei, C. Perlov and C. Taussig, J. SID, 17, 963 (2009).Google Scholar