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Effect of chemical mechanical treatment on the optoelectronic properties in CMOS image sensor

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Abstract

This paper presents the effect focal length variation by controlling chemical mechanical polishing (CMP) processes on the CIS optical performance. White sensitivity was drastically increased, and saturation signal variation and dead zone deviation were reduced. These experimental results showed that controlled focal length was able to increase CIS optoelectronic performance.

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Authors and Affiliations

  1. School of Integrative Engineering, Chung-Ang University, Seoul, 156-756, Korea

    Eunmi Choi, Areum Kim, Soon Hyeong Kwon, Yinhua Cui, Seon Jea Lee, Ukjae Lee, Hee Soo Choi, Hyung Bin Son & Sung Gyu Pyo

  2. Department of Physics, Chung-Ang University, Seoul, 156-756, Korea

    Sang June Hahn

  3. Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul, 136-791, Korea

    Sung Pil Yoon

Authors
  1. Eunmi Choi
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  2. Areum Kim
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  3. Soon Hyeong Kwon
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  4. Yinhua Cui
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  5. Seon Jea Lee
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  6. Ukjae Lee
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  7. Hee Soo Choi
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  8. Sang June Hahn
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  9. Sung Pil Yoon
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  10. Hyung Bin Son
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  11. Sung Gyu Pyo
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Corresponding authors

Correspondence to Hyung Bin Son or Sung Gyu Pyo.

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Choi, E., Kim, A., Kwon, S.H. et al. Effect of chemical mechanical treatment on the optoelectronic properties in CMOS image sensor. Korean J. Chem. Eng. 32, 199–201 (2015). https://doi.org/10.1007/s11814-014-0367-x

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  • DOI: https://doi.org/10.1007/s11814-014-0367-x

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