Abstract
Deposition of N-doped poly-Si films from SiH4 and NH3 using a single wafer type low pressure chemical vapor deposition (LPCVD) system was investigated to improve the grain size reduction and the grain size distribution. The deposition rate and surface roughness of N-doped Si were greatly affected by the NH3/SiH4 ratio such that they decreased with increasing NH3/SiH4 ratio. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements revealed that with increasing NH3/SiH4 ratio, the size of the grains was decreased and the grains size distribution became uniform. Finally, we successfully obtained N-doped poly-Si films having uniform grain size of approximately 6 nm.
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Woo, S.H., Kim, Y.W., Um, P.Y. et al. Film properties of nitrogen-doped polycrystalline silicon for advanced gate material. Korean J. Chem. Eng. 26, 824–827 (2009). https://doi.org/10.1007/s11814-009-0137-3
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DOI: https://doi.org/10.1007/s11814-009-0137-3