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The mechanism of the UV band edge photorefractivity suppression in highly doped LiNbO3:Zr crystals

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Abstract

The ultraviolet (UV) band edge photorefractivity of LiNbO3:Zr at 325 nm has been investigated. The experimental results show that the resistance against photorefraction at 325 nm is quite obvious but not as strong as that at 351 nm, when the doping concentration of Zr reaches 2.0 mol%. It is reported that the photorefractivity in other tetravalently doped LiNbO3 crystals, such as LiNbO3:Hf and LiNbO3:Sn, is enhanced dramatically with doping concentration over threshold. Here we give an explicit explanation on such seemly conflicting behaviors of tetravalently doped LiNbO3, which is ascribed to the combined effect of increased photoconductivity and the absorption strength of the band edge photorefractive centers.

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Authors and Affiliations

  1. College of Physics and Materials Science, Tianjin Normal University, Tianjin, 300387, China

    Fei-fei Xin  (辛非非)

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  1. Fei-fei Xin  (辛非非)
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Correspondence to Fei-fei Xin  (辛非非).

Additional information

This work has been supported by the Doctoral Foundation of Tianjin Normal University (No.135202XB1607).

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Xin, Ff. The mechanism of the UV band edge photorefractivity suppression in highly doped LiNbO3:Zr crystals. Optoelectron. Lett. 13, 419–422 (2017). https://doi.org/10.1007/s11801-017-7183-6

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