Abstract
A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm−3, 5×1017 cm−3, 2×1018 cm−3, 4×1018 cm−3 and 7×1018 cm−3 in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×1018 cm−3, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×1017 cm−3 exhibits the highest conversion efficiency.
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References
David A. and Grundmann M. J., Applied Physics Letters 97, 033501 (2010).
Nanishi Y., Saito Y. and Yamaguchi T., Japanese Journal of Applied Physics 42, 2549 (2003).
FU Yun-ying, DAI Li-ping, WANG Shu-ya and ZHANG Guo-jun, Optoelectronics Letters 9, 278 (2013).
Liu J., Wu Z. C. and Kuang S. P., Optoelectronics and Advanced Materials-Rapid Communications 7, 343 (2013).
Vos A. D., Endoreversible Thermodynamics of Solar Energy Conversion, Oxford: Oxford University Press, 90 (1992).
Jani O., Ferguson I., Honsberg C. and Kurtz S., Applied Physics Letters 91, 132117 (2007).
K. A. S. M. Ehteshamul Haque, Optoelectronics Letters 9, 177 (2013).
Lai K. Y., Lin G. J., Lai Y. L., Chen Y. F. and He J. H., Applied Physics Letters 96, 081103 (2010).
Jampana B. R., Melton A. G., Jamil M. N., Faleev N., Opila R. L., Ferguson I. T. and Honsberg C. B., IEEE Electron Device Letters 31, 32 (2010).
Zeng S. W., Cai X. M. and Zhang B. P., IEEE Journal of Quantum Electronics 46, 783 (2010).
Dahal R., Pantha B., Li J., Li J. Y. and Jiang H. X., Applied Physics Letters 98, 263504 (2011).
Yang C. C., Sheu J. K., Liang X. W., Huang M. S., Lee M. L., Chang K. H., Tu S. J., Huang F. W. and Lai W. C., Applied Physics Letters 97, 021113 (2010).
Farrell R. M., Neufeld C. J., Cruz S. C., Lang J. R., Iza M., Keller S., Nakamura S., DenBaars S. P., Mishra U. K. and Speck J. S., Applied Physics Letters 98, 201107 (2011).
Dahal R., Li J., Aryal K., Lin J. Y. and Jiang H. X., Applied Physics Letters 97, 073115 (2010).
Wu L. W., Chang S. J., Wen T. C., Su Y. K., Chen J. F., Lai W. C., Kuo C. H., Chen C. H. and Sheu J. K., IEEE Journal of Quantum Electronics 38, 446 (2002).
Cao X. A., Stokes E. B., Sandvik P. M., LeBoeuf S. F., Kretchmer J. and Walker D., IEEE Electron Device Letters 23, 535 (2002).
Lee Y. J., Lee M. H., Cheng C. M. and Yang C. H., Applied Physics Letters 98, 263504 (2011).
Jani O., Ferguson I., Honsberg C. and Kurtz S., Applied Physics Letters 91, 132117 (2007).
Wierer J. J., Koleske D. D. and Lee S. R., Applied Physics Letters 100, 111119 (2012).
Sang L. W., Takeguchi M., Lee W., Nakayama Y., Lozach M., Sekiguchi T. and Sumiya M., Applied Physics Express 3, 111004 (2010).
Kuwahara Y., Fujii T., Fujiyama Y., Sugiyama T., Iwaya M., Takeuchi T., Kamiyama S., Akasaki I. and Amano H., Applied Physics Express 3, 111001 (2010).
Rimada J. C., Hernández L., Connolly J. P. and Barnham K. W. J., Microelectronics Journal 38, 513 (2007).
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This work has been supported by the Key Scientific Research Project of Higher Education of Henan Province (No.15A510033).
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Lu, G., Wang, B. & Ge, Yw. Effects of Mg-doping concentration on the characteristics of InGaN based solar cells. Optoelectron. Lett. 11, 348–351 (2015). https://doi.org/10.1007/s11801-015-5100-4
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DOI: https://doi.org/10.1007/s11801-015-5100-4