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High performance blue organic light-emitting devices fabricated by using the doped Alq3 in NPB hole transmistion layers

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Abstract

We have designed a new structure blue emission device with doped Alq3 of 3% in hole transmission layers of NPB. The CIE coordination of the devices is (0.17,0.19). The maximum electroluminescence efficiency is 4.1 cd/A at 11V, the brightness is 118.8 cd/m2 at 7 V, and the maximum brightness is 10770 cd/m2 at 13 V.

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Authors and Affiliations

  1. Electronic Information and Engineering Department, Jilin Normal University, Siping, 136000, China

    Wang Jing, Jiang Wen-long, Liu Chun-ling & Wang Jin

  2. State Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun, 130023, China

    Wang Jing & Liu Shi-yong

Authors
  1. Wang Jing
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  2. Jiang Wen-long
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  3. Liu Chun-ling
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  4. Wang Jin
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  5. Liu Shi-yong
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Corresponding author

Correspondence to Wang Jing.

Additional information

Supported by the National Natural Science Foundation of China (Grant No 60207003 and No.60376028), the Special Funds for Major State Basic Research Project of China under Grant No 2003BC314703.

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Wang, J., Jiang, Wl., Liu, Cl. et al. High performance blue organic light-emitting devices fabricated by using the doped Alq3 in NPB hole transmistion layers. Optoelectron. Lett. 3, 353–355 (2007). https://doi.org/10.1007/s11801-007-7059-2

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  • DOI: https://doi.org/10.1007/s11801-007-7059-2

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