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Fabrication and property analysis of AIGaInP red light LED with high bright

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Abstract

The LED with DBR and enhancing transmission film was grown by MOCVD. At 20 mA DC injection current, the LED peak wavelength was 623 nm, the light intensity was 200 mcd, and the output light power was 2.14 mW. The light intensity and output light power have been improved than traditional LED.

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Correspondence to Han Jun.

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The work is supported by Beijing Science and Technology Committee (D0404003040221)

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Han, J., Li, Jj., Deng, J. et al. Fabrication and property analysis of AIGaInP red light LED with high bright. Optoelectron. Lett. 3, 417–419 (2007). https://doi.org/10.1007/s11801-007-7054-7

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  • DOI: https://doi.org/10.1007/s11801-007-7054-7

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