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A robust method to measure residual stress in micro-structure

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Abstract

An experimental investigation on the residual stress in porous silicon micro-structure by means of micro-Raman spectroscopy is presented. It is shown by detecting the Raman peak shifts on the surfaces and cross-sections of electrochemical etched porous silicon samples with different porosities that serious residual stresses distribute complicatedly within the whole porous silicon structure. It is proved that micro-Raman spectroscopy is an effective method for residual stress testing on the micro-structures applied in optoelectronics and microelectronics.

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Authors and Affiliations

  1. Department of mechanics, Tianjin University, Tianjin, 300072, China

    Kang Yi-Ian & Qiu Wei

  2. Department of Engineering Mechanics, Dalian University of Technology, Dalian, 116024, China

    Lei Zhen-kun

Authors
  1. Kang Yi-Ian
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  2. Qiu Wei
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  3. Lei Zhen-kun
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Additional information

Antrag GZ 398, Ghinesisch-Deutsches Zentrum für Wissenschaftsförderung

This work was supported by the National Natural Science Foundation of China(10232030)

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Kang, YI., Qiu, W. & Lei, Zk. A robust method to measure residual stress in micro-structure. Optoelectron. Lett. 3, 126–128 (2007). https://doi.org/10.1007/s11801-007-7022-2

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  • DOI: https://doi.org/10.1007/s11801-007-7022-2

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