Abstract
A novel silicon light emitting device was realized with standard 0.35 µm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500–820 nm.
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This work is supported by the National Natural Science Foundation of China (No. 60536030) and the National High Technology Research and Development Program of China (No. 2005AA311030)
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Liu, Hj., Gu, M., Liu, Jb. et al. Silicon light emitting device in CMOS technology. Optoelectron. Lett. 3, 85–87 (2007). https://doi.org/10.1007/s11801-007-6123-2
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DOI: https://doi.org/10.1007/s11801-007-6123-2