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Preparation and characterization of ultrananocrystalline diamond films in H2/Ar/CH4 gas mixtures system with novel filament structure

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Abstract

Diamond films were prepared by hot filament chemical vapor deposition (HFCVD) in a gas mixtures system of methane, argon and hydrogen. The composition and morphology in different deposition pressures and filament structures were investigated, as well as the friction and wear-resistant properties. The sp3-bonded content was measured and nano-mechanics properties were also tested. Results of atomic force microscopy and X-ray photoelectron spectroscopy show that the diamond films whose surface roughness is less than 10 nm and sp3-bonded content is greater than 70% can be prepared by bistratal filament structure with optimized proportion of Ar. It is also shown that the friction coefficient of diamond films is 0.13 and its wear-resistant property is excellent. Nano-mechanics of films shows that its elastic modulus is up to 650 MPa and hardness can reach higher than 60 GPa. The diamond films with excellent performance have a broad application prospect in microelectromechanical systems (MEMS).

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Correspondence to Zhi-ming Yu  (余志明).

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Foundation item: Projects(51301211, 21271188) supported by the National Natural Science Foundation of China; Project(ZZ13005) supported by the Foundation of Laboratory of Ultra Precision Manufacturing Technology of China Academy of Engineering Physics; Project(2010A0302013) supported by Research Foundation of China Academy of Engineering Physics; Project(2012M521541) supported by the China Postdoctoral Science Foundation; Project(20110933K) supported by the State Key Laboratory of Powder Metallurgy (Central South University), China; Project(CSU2013016) supported by the Open-End Fund for Valuable and Precision Instruments of Central South University, China

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Feng, J., Li, Ss., Luo, H. et al. Preparation and characterization of ultrananocrystalline diamond films in H2/Ar/CH4 gas mixtures system with novel filament structure. J. Cent. South Univ. 22, 4097–4104 (2015). https://doi.org/10.1007/s11771-015-2955-2

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  • DOI: https://doi.org/10.1007/s11771-015-2955-2

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