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Preparation of diamond/Cu microchannel heat sink by chemical vapor deposition

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Abstract

A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition (HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray detector (EDX). Results show that the nucleation density is found to be up to 1010 cm−2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.

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Authors and Affiliations

  1. School of Materials and Mechanical Engineering, Jiangxi Science and Technology Normal University, Nanchang, 330013, China

    Xue-zhang Liu  (刘学璋)

  2. School of Materials Science and Engineering, Central South University, Changsha, 410083, China

    Hao Luo  (罗浩), Xu Su  (苏栩) & Zhi-ming Yu  (余志明)

Authors
  1. Xue-zhang Liu  (刘学璋)
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  2. Hao Luo  (罗浩)
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  3. Xu Su  (苏栩)
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  4. Zhi-ming Yu  (余志明)
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Corresponding author

Correspondence to Zhi-ming Yu  (余志明).

Additional information

Foundation item: Project(21271188) supported by the National Natural Science Foundation of China

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Liu, Xz., Luo, H., Su, X. et al. Preparation of diamond/Cu microchannel heat sink by chemical vapor deposition. J. Cent. South Univ. 22, 835–841 (2015). https://doi.org/10.1007/s11771-015-2590-y

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  • DOI: https://doi.org/10.1007/s11771-015-2590-y

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