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Analysis and design of resistance-wire heater in MOCVD reactor

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Abstract

Metal organic chemical vapor deposition (MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.

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Author information

Authors and Affiliations

  1. Advanced Technology Generalization Institute of CNGC, Beijing, 100089, China

    Yu-xuan Qu  (曲毓萱)

  2. The Center of Coordination and Support of State Administration of Science, Technology and Industry for National Defence, Beijing, 100081, China

    Bin Wang  (王斌)

  3. School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan, 411201, China

    Shi-gang Hu  (胡仕刚), Zhi-jun Tang  (唐志军) & Jin Li  (李劲)

  4. School of Information Science and Engineering, University of Jinan, Ji’nan, 250022, China

    Xiao-feng Wu  (吴笑峰) & Zhi-ming Li  (李志明)

  5. The 41st Institute of China Electronics Technology Group Corporation, Qingdao, 266555, China

    Ying-lu Hu  (胡莹璐)

Authors
  1. Yu-xuan Qu  (曲毓萱)
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  2. Bin Wang  (王斌)
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  3. Shi-gang Hu  (胡仕刚)
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  4. Xiao-feng Wu  (吴笑峰)
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  5. Zhi-ming Li  (李志明)
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  6. Zhi-jun Tang  (唐志军)
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  7. Jin Li  (李劲)
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  8. Ying-lu Hu  (胡莹璐)
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Corresponding author

Correspondence to Shi-gang Hu  (胡仕刚).

Additional information

Foundation item: Projects(61376076, 61274026, 61377024) supported by the National Natural Science Foundation of China; Projects(12C0108, 13C321) supported by the Scientific Research Fund of Hunan Provincial Education Department, China; Projects(2013FJ2011, 2013FJ4232) supported by the Science and Technology Plan of Hunan Province, China

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Qu, Yx., Wang, B., Hu, Sg. et al. Analysis and design of resistance-wire heater in MOCVD reactor. J. Cent. South Univ. 21, 3518–3524 (2014). https://doi.org/10.1007/s11771-014-2331-7

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  • DOI: https://doi.org/10.1007/s11771-014-2331-7

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