Journal of Central South University

, Volume 21, Issue 8, pp 3205–3213 | Cite as

NAND flash service lifetime estimate with recovery effect and retention time relaxation

  • Kai Bu (步凯)
  • Yi-ran Chen (陈怡然)
  • Hui Xu (徐晖)
  • Wei Yi (易伟)
  • Qi-you Xie (谢启友)
Article

Abstract

A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance. The relationships among achievable program/erase (P/E) cycles, recovery time, bad block rate and storage time are analyzed. The achievable endurance and service life of a NAND flash are evaluated based on a flash cell degradation and recovery model by varying recovery time, badblock rate, and storage time. It is proposed to improve the service lifetime of solid state disk by both relaxing the bad block rate limitation and retention time while extending the recovery time. The results indicate that endurance can be improved by 17 times if the storage time guarantee is reduced from 10 a to 1 a with 105 s recovery time inserted between cycles.

Key words

NAND flash endurance retention recovery effect program/erase (P/E) cycle 

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Copyright information

© Central South University Press and Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Kai Bu (步凯)
    • 1
    • 2
  • Yi-ran Chen (陈怡然)
    • 1
  • Hui Xu (徐晖)
    • 2
  • Wei Yi (易伟)
    • 2
  • Qi-you Xie (谢启友)
    • 2
  1. 1.Department of Electrical and Computer EngineeringUniversity of PittsburghPittsburghUSA
  2. 2.School of Electronic Science and EngineeringNational University of Defense TechnologyChangshaChina

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