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Microstructure and electrical properties of La2O3-doped ZnO-based varistor thin films by sol-gel process

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Abstract

Microstructure and electrical properties of La2O3-doped ZnO-Bi2O3 thin films prepared by sol-gel process have been investigated. X-ray diffraction shows that most diffraction peaks of ZnO are equal, and the crystals of ZnO grow well. Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness. The nonlinear V-I characteristics of the films show that La2O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion, with the leakage current of 0.25 mA, the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.

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Authors and Affiliations

  1. School of Material Science and Engineering, Jiangsu University, Zhenjiang, 212013, China

    Dong Xu  (徐东), Bin Jiang  (姜斌), Feng-dan Cui  (崔凤单), Yong-tao Yang  (杨永涛), Hong-xing Xu  (徐红星), Qi Song  (宋琪) & Ren-hong Yu  (于仁红)

  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Dong Xu  (徐东)

  3. Changzhou Ming Errui Ceramics Co., Ltd., Changzhou, 213102, China

    Ren-hong Yu  (于仁红)

Authors
  1. Dong Xu  (徐东)
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  2. Bin Jiang  (姜斌)
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  3. Feng-dan Cui  (崔凤单)
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  4. Yong-tao Yang  (杨永涛)
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  5. Hong-xing Xu  (徐红星)
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  6. Qi Song  (宋琪)
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  7. Ren-hong Yu  (于仁红)
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Corresponding author

Correspondence to Dong Xu  (徐东).

Additional information

Foundation item: Project(20123227120021) supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China; Project(BK2012156) supported by the Natural Science Foundation of Jiangsu Province, China; Project(KFJJ201105) supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices, China; Project(CJ20125001) supported by the Application Program for Basic Research of Changzhou, China; Project(13KJB430006) supported by the Universities Natural Science Research project of Jiangsu Province, China; Project supported by the Industrial Center of Jiangsu University Undergraduate Practice-Innovation Training Program, China

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Xu, D., Jiang, B., Cui, Fd. et al. Microstructure and electrical properties of La2O3-doped ZnO-based varistor thin films by sol-gel process. J. Cent. South Univ. 21, 9–13 (2014). https://doi.org/10.1007/s11771-014-1908-5

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  • DOI: https://doi.org/10.1007/s11771-014-1908-5

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