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Preparation and properties of SrBi2.2 Ta2O9 thin film

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Abstract

SrBi2.2 Ta2O9 (SBT) thin film with thickness of 2 µm was successfully prepared by sol-gel method, using strontium acetate semihydrate [Sr(CH3 COO)2 · 1/2H2O] and bismth subnitrate [BiO(NO3)], and tantalum ethoxide [Ta(OCH2CH3)5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction (XRD) and transmission electron microscope(TEM) results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed after being annealed at 800 °C for for 1 min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4. 2 µ/C/cm2.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, China

    Wang Wen (Doctoral candidate), Jia De-chang & Zhou Yu

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  1. Wang Wen
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  2. Jia De-chang
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  3. Zhou Yu
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Correspondence to Wang Wen.

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Foundation item: Project (HIT. 2001. 67) supported by the Scientific Research Foundation of Harbin Institute of Technology; project (50172012) supported by the National Natural Science Foundation of China

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Wang, W., Jia, Dc. & Zhou, Y. Preparation and properties of SrBi2.2 Ta2O9 thin film. J Cent. South Univ. Technol. 12, 376–379 (2005). https://doi.org/10.1007/s11771-005-0164-0

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  • DOI: https://doi.org/10.1007/s11771-005-0164-0

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