Abstract
The characteristics of Ti:LiNO3 traveling wave modulator have been analyzed in this paper, taking into account the reflection coefficient of the terminator. The main emphasis of the present work is placed on the description of influence of reflection coefficient on the bandwidth, the half-wave voltage and the time-domain response.
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Gou, Y., Chen, W. & Li, Y. Influence of reflection coefficient on the traveling wave modulator performances. J. of Electron.(China) 15, 378–382 (1998). https://doi.org/10.1007/s11767-998-0013-z
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DOI: https://doi.org/10.1007/s11767-998-0013-z