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Ground bouncing noise reduction technique considering wake-up delay in MTCMOS circuits

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Journal of Electronics (China)

Abstract

Multi-Threshold CMOS (MTCMOS) is an effective technique for controlling leakage power with low delay overhead. However the large magnitude of ground bouncing noise induced by the sleep to active mode transition may cause signal integrity problem in MTCMOS circuits. We propose a methodology for reducing ground bouncing noise under the wake-up delay constraint. An improved two-stage parallel power gating structure that can suppress the ground bouncing noise through turn on sets of sleep transistors consecutively is proposed. The size of each sleep transistor is optimized by a novel sizing algorithm based on a simple discharging model. Simulation results show that the proposed techniques achieve at least 23% improvement in the product of the peak amplitude of ground bouncing noise and the wake-up time when compared with other existing techniques.

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References

  1. Siva G. Narendra and A. Chandrakasan. Leakage in Nanometer CMOS Technologies. New York, Springer-Verlag, 2006, 6–19.

    Google Scholar 

  2. S. Mutoh, T. Douseki, and Y. Matsuya, et al. 1-V power supply high-speed digital circuit technology. IEEE Journal of Solid-State Circuits, 30(1995)8, 847–854.

    Article  Google Scholar 

  3. H. Kawaguchi, K. Nose, and T. Sakura. A super cut-off CMOS (SCCMOS) scheme for 0.5-V supply voltage with picoampere standby current. IEEE Journal of Solid-State Circuits, 35(2000)10, 1498–1501.

    Article  Google Scholar 

  4. S. Kim, S. V. Kosonocky, and D. R. Knebel. Understanding and minimizing ground bounce during mode transition of power gating structure. IEEE International Symposium on Low Power Electronics and Design, Seoul, Korea, Aug. 2003, 22–25.

  5. H. Jiao and V. Kursun. Ground bouncing noise suppression techniques for MTCMOS circuits. IEEE 1st Asia Symposium on Quality Electronic Design, Kuala Lumpur, Malaysia, July 2009, 64–70.

  6. J. Gu, R. Harjani, and C. Kim. Distributed active decoupling capacitors for on-chip supply noise cancellation in digital VLSI circuits. IEEE Symposium on VLSI Circuits, Honolulu, Hawaii, USA, June 2006, 216–217.

  7. Abdollahi, F. Fallah, and M. Pedram. A robust power gating structure and power mode transition strategy for MTCMOS design. IEEE Transactions on VLSI Systems, 15(2007)1, 80–89.

    Article  Google Scholar 

  8. S. Henzler, M. Eireiner, and J. Berthold, et al. Activation technique for sleep-transistor circuits for reduced power supply noise. IEEE European Solid-State Circuits Conference, Montreux, Switzerland, Sep. 2006, 102–105.

  9. S. Kim, C. J. Choi, and D. K. Jeong, et al. Reducing ground-bounce noise and stabilizing the data-retention voltage of power-gating structures. IEEE Transactions on Electron Devices, 55(2008)1, 197–205.

    Article  MathSciNet  Google Scholar 

  10. D. Howard and K. Shi. Power-on current control in sleep transistor implementations. IEEE International Symposium on VLSI Design, Automation and Test, Hsinchu, Apr. 2006, 1–4.

  11. Nanoscale Integration and Modeling (NIMO) Group, Arizona State University. Predictive Technology Model (PTM). http://www.eas.asu.edu/~ptm/. Jan. 2009.

  12. Nangate Open Cell Library. http://www.opencelllibrary.org. Aug. 2009.

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Correspondence to Xi Tian.

Additional information

Supported by the National Natural Science Foundation of China (No. 6087001).

Communication author: Tian Xi, born in 1971, male, Ph.D. candidate.

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Tian, X., Wang, Y. & Dong, Z. Ground bouncing noise reduction technique considering wake-up delay in MTCMOS circuits. J. Electron.(China) 28, 596–601 (2011). https://doi.org/10.1007/s11767-012-0706-1

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  • DOI: https://doi.org/10.1007/s11767-012-0706-1

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