Abstract
An improved structure of linear transconductor is presented in this paper. It is analyzed in theory and simulated with Spectre based on 0.25μm CMOS process. The simulation results show that the differential input voltage of the proposed transconductor is 4.0Vpp(peak to peak), whereas the differential input voltage of the existing source degeneration structure is 2.2Vpp, when their nonlinear errors are required to be less than 0.15%.
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Gao, Q., Li, X. & Qin, S. The design of high performance linear transconductor. J. of Electron.(China) 23, 107–108 (2006). https://doi.org/10.1007/s11767-004-0016-3
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DOI: https://doi.org/10.1007/s11767-004-0016-3