Abstract
Noise interference and multiple access interference are the main impairment to the performance of DS/CDMA communication system. This letter presents that OverSampled Chaotic Map (OSCM) binary sequences are secure as spreading sequences, and based on the optimal quantizing method, the BER performance of the system has been derived in detail, the internal relationships among the number of users, the power of noise and the length of code chips are revealed in mathematical formulae. The performance of the system can be improved by employing these formulae. Numerical results conform the efficiency of discussion in this letter.
References
Ling C., Li S. Q., Chaotic spreading sequences with multiple access performance better than random sequences, IEEE Trans. on CAS(I), 47(2000)3, 394–397.
Liu J. B., Ye C. F., Zhang S. J., Statistical analysis on the channel interference of chaotic spread-spectrum communication system, J. of the China Railway Society, 21(1999)3, 60–63, (in Chinese).
D. Sandoval-Morantes, D. Mufloz-Rodriguez, Chaotic sequences for multiple access, Electronics Letters, 34(1998)3, 235–237.
He Z. Y., Li K., Yang L. X., Chaotic map binary sequences with good security, J. of Electronics, 21(1999)5, 646–651, (in Chinese).
Zhang H. T., Guo J. C., et al., Oversampled chaotic map binary sequences: definition, performance and realization, Proc. of IEEE APCCAS2000, Tianjin, China, Dec. 2000, 618–621.
Zhang H. T., Wang H. Y., Ding R. T. Security analysis based on oversampled chaotic binary sequences, Trans. of Tianjin University, 7(2001)2, 123–126.
U Parlitz, S. Ergezinger, Robust communication based on chaotic spreading sequences, Phys. Lett. A, 188(1994)5, 146–150.
A. Barda, S. Laufer, Chaotic signals for multiple access communications, Proc. 18th Convention of Electrical and Electronics Engineers, Israel, March 1995, 2.1.3(1–5).
Author information
Authors and Affiliations
About this article
Cite this article
Zhang, H., Wang, H. & Ding, R. Oversampled chaotic binary sequences for multiple access communication. J. of Electron.(China) 19, 178–182 (2002). https://doi.org/10.1007/s11767-002-0032-0
Issue Date:
DOI: https://doi.org/10.1007/s11767-002-0032-0