Abstract
The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET’s. The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments with three typical hot-carrier injection, i.e., the maximum gate current, maximum substrate current and parasitic bipolar transistor action. Experiments show that PMOSFET’s degradation is caused by hot carriers injected into the drain side of the gate oxide and the types of trapped hot carrier depend on the bias conditions, and NMOSFET’s degradation is caused by hot holes. This paper reports for the first time that the electric characteristics of NMOSFET’s and PMOSFET’s are significantly different after the gate oxide breakdown, and an extensive discussion of the experimental findings is provided.
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References
C. Hu, S. C. Tam, et al., Hot-carrier-induced MOSFET degradation-model, monitor and improvement, IEEE Trans. on Electron Devices, 32(1985)2, 375–385.
P. Heremans, R. Bellens, G. Groeseneken, et al., Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET’s, IEEE Trans. on Electron Devices, 45(1998)12, 2194–2209.
Y. Leblebici, S. Kang, Hot-Carrier Reliability of MOS VLSI Circuits, Boston, London, chapter 1.
S. Tam, P. K. Ko, C. Hu, Lucky-election model of channel hot-electron injection in MOSFET’s, IEEE Trans. on Electron Devices, 31(1984)9, 1116–1125.
T. Tsuchiya, T. Ohno, Y. Kado, et al., Hot-carrier-injected oxide region in front and back interfaces in ultra-thin (50nm), fully depleted, deep-submicron NMOS and PMOSFET’s/SIMOX and their hot-carrier immunity, IEEE Trans. on on Electron Devices, 41(1994)12, 2351–2356.
S. H. Renn, J. L. Pelloie, F. Balestra, Hot-carrier effects and reliable lifetime prediction in deep submicron N- and P-channel SOI MOSFET’s, IEEE Trans. on Electron Devices, 45(1998)11, 2335–2342.
J. P. Colinge, Silicon-on-Insulator Tecnology Materials to VLSI, U.S.A, Kluwer Academic Pub., 1991.
J. G. Zhu, A study of SOI MOSFET’s perform and hot-carrier degradation, Master Dissertation, Xidian University, 2000, (in Chinese).
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Supported by the National Advance Research Foundation of China. (No.9825741)
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Liu, H., Hao, Y. & Zhu, J. A study on hot-carrier-induced gate oxide breakdown in partially depleted SIMOX MOSFET’s. J. of Electron.(China) 19, 50–56 (2002). https://doi.org/10.1007/s11767-002-0008-0
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DOI: https://doi.org/10.1007/s11767-002-0008-0